1/f noise in ion sensitive field effect transistors from subthreshold to saturation
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 46 (1), 259-261
- https://doi.org/10.1109/16.737468
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- CMOS low noise switched charge sensitive preamplifier for CdTe X-ray detectionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 1/f Noise in CMOS transistors for analog applications from subthreshold to saturationSolid-State Electronics, 1998
- Microtechnologies for PH ISFET chemical sensorsMicroelectronics Journal, 1997
- Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noiseAdvances in Physics, 1989
- Electrochemistry of chemically sensitive field effect transistorsSensors and Actuators, 1983
- Basic limitations of isfet and silicon pressure transducers: noise theory, models and device scalingSensors and Actuators, 1983
- Equilibrium Noise in Ion Selective Field Effect TransistorsJournal of the Electrochemical Society, 1982
- Development of an Ion-Sensitive Solid-State Device for Neurophysiological MeasurementsIEEE Transactions on Biomedical Engineering, 1970