Development of an Ion-Sensitive Solid-State Device for Neurophysiological Measurements
- 1 January 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Biomedical Engineering
- Vol. BME-17 (1), 70-71
- https://doi.org/10.1109/tbme.1970.4502688
Abstract
The development of an ion-sensitive solid-state device is described. The device combines the principles of an MOS transistor and a glass electrode and can be used for measurements of ion activities in electrochemical and biological environments. Some preliminary results are given.Keywords
This publication has 5 references indexed in Scilit:
- The influence of substrate bias upon the AC characteristics of MOS transistorsProceedings of the IEEE, 1969
- New Amplification Method for Depth RecordingIEEE Transactions on Biomedical Engineering, 1968
- Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized SiliconJournal of the Electrochemical Society, 1967
- Design theory of a surface field-effect transistorSolid-State Electronics, 1964
- Cation Selective Glass Electrodes and their Mode of OperationBiophysical Journal, 1962