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Hot-Carrier InSb microwave modulation
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Hot-Carrier InSb microwave modulation
Hot-Carrier InSb microwave modulation
BT
B.T.G. Tan
B.T.G. Tan
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1 November 1967
journal article
Published by
Institution of Engineering and Technology (IET)
in
Electronics Letters
Vol. 3
(11)
,
504
https://doi.org/10.1049/el:19670397
Abstract
The microwave power absorbed by a rod of p type InSb in Q band waveguide decreased by up to 9 dB when electric fields of up to 126 V/cm were applied to it, probably owing to a hot-carrier effect.
Keywords
INSB MICROWAVE
CARRIER INSB
WAVEGUIDE
V/CM
ELECTRIC
ROD
OWING
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Cited by 2 articles