Low power transverse optical bistability near bound excitons in cadmium sulfide
- 15 March 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (6), 574-576
- https://doi.org/10.1063/1.94844
Abstract
We report the observation of cw transverse optical bistability without power hysteresis at 1-mW power levels in uncoated cadmium sulfide platelets. Optically induced refractive index changes as large as 0.15 are deduced from measurements of the transverse spatial ring profile.Keywords
This publication has 16 references indexed in Scilit:
- Non linear optical transmission of CdSePhysica B+C, 1983
- Theory of absorption and refraction of direct-gap semiconductors with arbitrary free-carrier concentrationsZeitschrift für Physik B Condensed Matter, 1982
- Theory of Gaussian-beam optical bistabilityOptics Communications, 1982
- Electron–Hole Plasma Expansion in Direct‐Gap GaAs1−xPxPhysica Status Solidi (b), 1981
- Optical properties of highly excited direct gap semiconductorsPhysics Reports, 1981
- Numerical studies of the formation and decay of electron-hole plasma clusters in highly excited direct-gap semiconductorsPhysical Review B, 1981
- Optical bistability in semiconductorsApplied Physics Letters, 1979
- The group velocity of light and polaritons in CdSOptics Communications, 1977
- Dynamics of exciton-polariton recombination in CdSPhysical Review B, 1975
- Lifetimes of Bound Excitons in CdSPhysical Review B, 1970