High-frequency noise measurements on FET's with small dimensions
- 1 November 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (11), 1801-1805
- https://doi.org/10.1109/t-ed.1986.22743
Abstract
A low-noise high-frequency transresistance amplifier has been used to accurately measure broad-band noise in MOSFET's with small widths and submicrometer channel lengths. The technique allows noise characterization up to frequencies of 100 MHz of the small devices available as process test arrays from different fabrication lines. The noise in the different portions of theI-Vcharacteristics of submicrometer MOSFET's has been characterized and shown to be greater by factors of 2 to 4 than the noise expected from long-channel noise theory.Keywords
This publication has 3 references indexed in Scilit:
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- A systems approach to 1-µm NMOSProceedings of the IEEE, 1983