Ge-Au interface formation vs. Si-Au interface formation: Are they different processes?
- 31 January 1982
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 41 (3), 213-215
- https://doi.org/10.1016/0038-1098(82)91035-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Abruptness of Semiconductor-Metal InterfacesPhysical Review Letters, 1981
- Energy loss spectroscopy (ELS) on the Si-Au systemSolid State Communications, 1980
- Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface StatesPhysical Review Letters, 1980
- Photoemission studies of the silicon-gold interfacePhysical Review B, 1979
- Optical Properties of Amorphous Metallic AlloysPhysical Review Letters, 1978
- Photoemission spectroscopy using synchrotron radiation. II. The electronic structure of germaniumPhysical Review B, 1975