Invasive nature of corona charging on thermal Si/SiO2 structures with nanometer-thick oxides revealed by electron spin resonance
- 28 April 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (17), 2835-2837
- https://doi.org/10.1063/1.1540245
Abstract
Electron spin resonance (ESR) analysis reveals that the versatile noncontacting corona biasing method frequently applied in the electrical analysis of -based structures is not a noninvasive tool, as usually assumed. In the absence of carrier impact damage, at least five types of ESR-active defects are generated, indicating the drastic impact and jeopardizing inference of intrinsic device properties.
Keywords
This publication has 23 references indexed in Scilit:
- Density of states of Pb1 Si/SiO2 interface trap centersApplied Physics Letters, 2002
- Interaction of Pb defects at the (111)Si/SiO2 interface with molecular hydrogen: Simultaneous action of passivation and dissociationJournal of Applied Physics, 2000
- Hydrogen-induced thermal interface degradation in (111) Si/SiO2 revealed by electron-spin resonanceApplied Physics Letters, 1998
- Electrical activity of interfacial paramagnetic defects in thermal (100)Physical Review B, 1998
- The silicon-silicon dioxide system: Its microstructure and imperfectionsReports on Progress in Physics, 1994
- Atomic hydrogen reactions withcenters at the (100) Si/interfacePhysical Review Letters, 1994
- Depassivation of Damp‐Oxide P b Centers by Thermal and Electric Field StressJournal of the Electrochemical Society, 1991
- Interface traps and P b centers in oxidized (100) silicon wafersApplied Physics Letters, 1986
- Hole traps and trivalent silicon centers in metal/oxide/silicon devicesJournal of Applied Physics, 1984
- Mass-Spectrometric Studies of Corona Discharges in Air at Atmospheric PressuresThe Journal of Chemical Physics, 1966