Low Threshold Current Density Operation of 1.16 µm Highly Strained GaInAs/GaAs Vertical Cavity Surface Emitting Lasers on (100) GaAs Substrate

Abstract

We demonstrate highly strained GaInAs/GaAs quantum well (QW) vertical cavity surface emitting lasers (VCSELs) emitting at 1.16 µm with a low threshold current density and high efficiency in the 1.2-µm-wavelength band. The VCSEL structure was monolithically grown on a (100) n-type GaAs substrate by low-pressure metalorganic vapor phase epitaxy (MOVPE). The threshold current is 3 mA for a 10×10 µm² oxide aperture device, corresponding to a threshold current density of 3 kA/cm². The maximum output power ismore than 2 mW. The maximum CW operating temperature is 85°C and the threshold current is almost constant in temperature range of 25–75°C.