High-rate (∼50-Å/s) deposition of ZnO films for amorphous silicon alloy solar-cell back-reflector application
- 1 August 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 70 (3), 1692-1694
- https://doi.org/10.1063/1.349538
Abstract
Back reflectors have been fabricated by the deposition of ZnOfilms on textured Ag films. High deposition rates of ∼50 Å/s have been achieved by the dc magnetron sputtering technique. The ZnO target used has been prepared in our laboratory. Amorphous silicon alloy solar cells have been deposited on the ZnO/textured Ag back reflector. Control samples have been prepared by the deposition of identical cells on the same back reflector, but in which the ZnOfilms have been prepared by a low‐rate ∼5‐Å/s rf sputtering process. The short‐circuit current density, which has been used as the primary test parameter for evaluating the back reflectors, is slightly superior in the case of the high‐rate ZnO back reflector. The high‐rate deposition process is, therefore, attractive for large‐volume production application.Keywords
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