The Role of Vacancies in Enhancing Oxygen Diffusion in Silicon
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Defects in irradiated silicon: EPR of the tin-vacancy pairPhysical Review B, 1975
- Infrared studies of low temperature electron irradiated silicon containing germanium oxygen and carbon†Radiation Effects, 1971
- Production of Divacancies and Vacancies by Electron Irradiation of SiliconPhysical Review B, 1965