Growth of (111) CdTe on tilted (001) GaAs

Abstract
Twin-free growth of (111) CdTe on (001) GaAs is reported for substrates tilted around the [11̄0] axis, i.e., exposing Ga dangling bonds at the terrace edges. Layers grown on nominally (001) substrates and tilted substrates are characterized by double crystal x-ray diffraction, low-temperature reflectivity and photoluminescence, channeling, and high-resolution transmission electron microscopy.