Energy spectra of donors in GaAsGa1−xAlxAs quantum well structures
- 1 January 1982
- journal article
- Published by Elsevier in Surface Science
- Vol. 113 (1-3), 161-164
- https://doi.org/10.1016/0039-6028(82)90579-9
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Electronic properties of the AlAs-GaAs (001) interface and superlatticePhysical Review B, 1979
- The CdTe/HgTe superlattice: Proposal for a new infrared materialApplied Physics Letters, 1979
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978
- Electronic states of impurities located at or near semiconductor–insulator interfacesJournal of Vacuum Science and Technology, 1978
- Tight-binding study of the electronic structure of the InAs–GaSb (001) superlatticeJournal of Vacuum Science and Technology, 1978
- Band Structure of AlAs-GaAs(100) SuperlatticesPhysical Review Letters, 1977
- Epitaxial structures with alternate-atomic-layer composition modulationApplied Physics Letters, 1976
- Laser oscillation from quantum states in very thin GaAs−Al0.2Ga0.8As multilayer structuresApplied Physics Letters, 1975
- Superlattice and Negative Differential Conductivity in SemiconductorsIBM Journal of Research and Development, 1970