Donor Electron Spin Relaxation in Silicon
- 15 July 1957
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 107 (2), 491-496
- https://doi.org/10.1103/physrev.107.491
Abstract
A study of donor electron spin relaxation which can occur due to the presence of spin-orbit coupling is carried out. It is found that at helium temperatures both the direct and Raman processes are too weak to be observed, but that at 14°K the Raman process yields a relaxation time of 1 sec.Keywords
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