Bonding Electron Distribution of GaP, GaAs and GaSb
- 1 April 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (4R)
- https://doi.org/10.1143/jjap.28.573
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Ab initiolinear combination of pseudo-atomic-orbital scheme for the electronic properties of semiconductors: Results for ten materialsPhysical Review B, 1987
- “ε-Scanning”–A Method of Evaluating the Dimensional and Orientational Distribution of Crystallites by X-Ray Powder DiffractometerJapanese Journal of Applied Physics, 1986
- Relativistic and core-relaxation effects on the energy bands of gallium arsenide and germaniumPhysical Review B, 1985
- First-principles electronic structure of Si, Ge, GaP, GaAs, ZnS, and ZnSe. I. Self-consistent energy bands, charge densities, and effective massesPhysical Review B, 1981
- Temperature dependence of X-ray reflection intensity from an absorbing perfect crystal near an absorption edgeActa Crystallographica Section A Foundations and Advances, 1979
- X-ray structure factors and the debye-waller factor of gallium arsenide crystals determined from full widths at half maximum of bragg case diffraction curvesPhysica Status Solidi (a), 1977
- Determination of structure factors by white X-ray diffraction from a powder sample of GaPJournal of Applied Crystallography, 1975
- Grain boundary parametersActa Crystallographica Section A, 1972
- Anomalous dispersion corrections computed from self-consistent field relativistic Dirac–Slater wave functionsActa Crystallographica, 1965
- Infrared lattice reflection spectra of III–V compound semiconductorsJournal of Physics and Chemistry of Solids, 1962