Properties of arsenic-doped p-type ZnO grown by hybrid beam deposition
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- 7 July 2003
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (1), 87-89
- https://doi.org/10.1063/1.1590423
Abstract
As-doped ZnO (ZnO:As) films have been characterized. ZnO:As films show p -type characteristics determined by Hall-effect and photoluminescence(PL)measurements. The hole concentration can be increased up to the mid -10 17 - cm −3 range. The thermal binding energy of the As acceptor (E A th-b ) is 120±10 meV , as derived from temperature-dependent Hall-effect measurements. The PL spectra reveal two different acceptor levels (E A opt-b ), located at 115 and 164 meV, respectively, above the maximum of the ZnOvalence band, and also show the binding energy of the exciton to the As-acceptor (E AX b ) is about 12 meV. The values of the ratio E AX b /(E A th-b or E A opt-b ) are located in the range from 0.07 to 0.11.Keywords
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