Use of incoherent light for annealing implanted Si wafers and growing single-crystal Si on SiO2

Abstract

By using halogen lamps, we have annealed implanted Si wafers and recrystallised deposited poly-Si. A transient anneal was accomplished with a good uniformity on 4 in Si wafers with no redistribution of the dopant profile. By using a shaped spot, we obtained 〈100〉 single-crystal Si, over an area 2 mm by several centimetres, on a SiO2 layer grown on a Si substrate, without seeding.