The unoccupied electronic structure of 1T-VSe2
- 17 December 1990
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 2 (50), 10045-10051
- https://doi.org/10.1088/0953-8984/2/50/009
Abstract
By use of angle-resolved inverse photoemission spectroscopy (ARIPES) in the isochromate mode using 9.88 eV photon energy the authors have studied the unoccupied electronic structure of 1T-VSe2 along the principal symmetry directions Gamma M, Gamma M' and Gamma K. The data are found to be in good agreement with the recent ARIPES study of Law et al (1990) employing 20 eV photon energy. The experimental bands are reasonably well described by band-structure calculations but viewed together with the 20 eV data appear to be less dispersive perpendicular to the surface than theoretically predicted. A structure at 5 eV above EF for normal incidence can be identified as an image potential state.Keywords
This publication has 17 references indexed in Scilit:
- Direct determination of III-V semiconductor surface band gapsPhysical Review B, 1990
- An inverse photoemission study of vanadium diselenideVacuum, 1990
- Bandpass photon detector with high efficiency for inverse photoemission spectroscopyReview of Scientific Instruments, 1987
- Spectroscopy of image-potential states with inverse photoemissionPhysical Review B, 1986
- A simple and compact system for combined angular resolved inverse photoemission and photoemission in the vacuum ultravioletJournal of Physics E: Scientific Instruments, 1985
- Angle resolved photoemission from VSe2Journal of Physics C: Solid State Physics, 1980
- The electronic structure of the vanadium dichalcogenidesPhysica B+C, 1980
- Electronic structure of-VPhysical Review B, 1979
- k-dependent photohole scattering in photoemission from VSe2Journal of Physics C: Solid State Physics, 1979
- Band structures and Fermi surfaces for 1T-TaS2, 1T-TaSe2and 1T-VSe2Journal of Physics C: Solid State Physics, 1977