Germanium: semiconductor properties
- 30 September 1966
- journal article
- Published by Elsevier in Infrared Physics
- Vol. 6 (3), 129-143
- https://doi.org/10.1016/0020-0891(66)90007-8
Abstract
No abstract availableThis publication has 37 references indexed in Scilit:
- Energy-Band Structure of Germanium and Silicon: The k·p MethodPhysical Review B, 1966
- Electronic Spectra of Crystalline Germanium and SiliconPhysical Review B, 1964
- Precise lattice constants of germanium, aluminum, gallium arsenide, uranium, sulphur, quartz and sapphireActa Crystallographica, 1962
- Exciton and Magneto-Absorption of the Direct and Indirect Transitions in GermaniumPhysical Review B, 1959
- Fine Structure in the Absorption-Edge Spectrum of GePhysical Review B, 1957
- Oscillatory Magneto-Absorption in SemiconductorsPhysical Review B, 1957
- Cyclotron Resonance Experiments in Silicon and GermaniumPhysical Review B, 1956
- Precision Determination of Lattice Constants with a Geiger-Counter X-Ray DiffractometerPhysical Review B, 1955
- Precision Density Determination of Large Single Crystals by Hydrostatic WeighingPhysical Review B, 1955
- Conductivity and Hall Effect in the Intrinsic Range of GermaniumPhysical Review B, 1954