Photoluminescence spectrum of p-type AlxGa1−xAs:Ge
- 1 January 1982
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (1), 627-632
- https://doi.org/10.1063/1.329969
Abstract
The results of photoluminescence measurements of p‐type AlxGa1−xAs:Ge (with 0.03<xx = 0.30 is explained rather in terms of a crossing of donor levels associated with the direct and indirect band gaps. It is also shown that the luminescence is characteristic of donor‐acceptor recombination involving shallow donors for xx≳0.30. The broad emission band at ∼1.5 eV has also been investigated but its source has not been identified. The presence of this band in the room temperature spectrum and the implications for characterization of light‐emitting devices are discussed.Keywords
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