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Fabrication of Highly Selective Tungsten Oxide Ammonia Sensors
Home
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Fabrication of Highly Selective Tungsten Oxide Ammonia Sensors
Fabrication of Highly Selective Tungsten Oxide Ammonia Sensors
E. Llobet
E. Llobet
GM
G. Molas
G. Molas
PM
P. Molinàs
P. Molinàs
JC
J. Calderer
J. Calderer
X. Vilanova
X. Vilanova
J. Brezmes
J. Brezmes
J. E. Sueiras
J. E. Sueiras
X. Correig
X. Correig
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1 January 2000
journal article
Published by
The Electrochemical Society
in
Journal of the Electrochemical Society
Vol. 147
(2)
,
776-779
https://doi.org/10.1149/1.1393270
Abstract
Tungsten oxide is shown to be a very promising material for the fabrication of highly selective ammonia sensors. Films of were deposited onto a silicon substrate by means of the drop‐coating method. Then, the films were annealed in dry air at two different temperatures (300 and 400°C). X‐ray photoelectron spectroscopy was used to investigate the composition of the films. Tungsten appeared both in and oxidation states, but the second state was clearly dominant. Scanning electron microscopy results showed that the oxide was amorphous or nanocrystalline. The devices were sensitive to ammonia vapors when operated between 250 and 350°C. The optimal operating temperature for the highest sensitivity to ammonia was 300°C. Furthermore, when the devices were operated at 300°C, their sensitivity to other reducing species such as ethanol, methane, toluene, and water vapor was significantly lower, and this resulted in a high selectivity to ammonia. A model for the sensing mechanisms of the fabricated sensors is proposed. © 2000 The Electrochemical Society. All rights reserved.
Keywords
MODEL
SENSORS
FABRICATION
FILMS
DEVICES
OPTIMAL
TUNGSTEN OXIDE
SELECTIVE AMMONIA
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Open Access
Cited by 132 articles