Effect of indirect minima carrier population on the output characteristics of AlGaInP light-emitting diodes
- 10 November 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (20), 3201-3203
- https://doi.org/10.1063/1.125277
Abstract
We show that carrier transfer to the indirect X level in the confining layer is responsible for most of the substantial decrease in the efficiency of AlGaInP light-emitting diodes (LEDs) operating at short wavelengths. Carrier transfer to the confining X level was obtained by reducing the separation between the AlGaInP direct minimum and the X levels by varying the Al composition in the active region and by the application of hydrostatic pressure. Carrier transfer to the confining X level appeared as an additional peak in the electroluminescence (EL) and resulted in a significant decrease of the LED efficiency. A simple model of the EL emission that takes into account carrier population in the X minima was found to be in excellent agreement with the measured EL behavior.
Keywords
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