Observation of bulk HfO2 defects by spectroscopic ellipsometry
- 1 July 2004
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 22 (4), 1337-1341
- https://doi.org/10.1116/1.1705593
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Mobility Measurement and Degradation Mechanisms of MOSFETs Made With Ultrathin High-k DielectricsIEEE Transactions on Electron Devices, 2004
- Plasma-enhanced chemical vapor deposition and characterization of high-permittivity hafnium and zirconium silicate filmsJournal of Applied Physics, 2002
- Spectroscopic ellipsometry characterization of high-k dielectric HfO2 thin films and the high-temperature annealing effects on their optical propertiesApplied Physics Letters, 2002
- Hafnium interdiffusion studies from hafnium silicate into siliconApplied Physics Letters, 2001
- Band offsets of wide-band-gap oxides and implications for future electronic devicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen SourcesScience, 2000
- Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealingApplied Physics Letters, 2000
- Thermodynamic stability of binary oxides in contact with siliconJournal of Materials Research, 1996
- MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltagesSolid-State Electronics, 1996
- Electronic structure of stoichiometric and-bombardeddetermined by resonant photoemissionPhysical Review B, 1995