Narrowband detection at long wavelengths with epitaxial PbySn1−ySe films

Abstract

Narrowband photovoltaic detectors were prepared using two Pb_ySn_1−ySe epitaxial layers of slightly different alloy compositions grown on BaF₂ substrates. Using Pb to form Schottky barrier detectors has yielded devices with D*_λ (10.6 μm) =7.0×10¹⁰ cm Hz^1/2 W⁻¹ and spectral half‐bandwidths of 6000 Å. These devices are insensitive to variations in incident angle due to the large refractive indices of Pb_ySn_1−ySe.