Abstract
Working within the next-nearest-neighbor sp3 zinc-blende model, we restrict the number of free tight-binding parameters from 23 to 8 by directly inverting the Γ-, X-, and L-point energy expressions. In addition, we solve for the parameter dependence of the (001) conduction- and valence-band masses and present optimized parameter sets for GaAs, GaSb, AlAs, InAs, and InSb. The optimal parameters are incorporated in energy-gap calculations for InAs/Inx Ga1x Sb superlattices.