High electric-field effects on short-channel polythiophene polymer field-effect transistors
- 1 February 2004
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 95 (3), 1497-1501
- https://doi.org/10.1063/1.1636830
Abstract
The field-effect mobility (FEM) in polythiophene (PT) polymerfield-effect transistors(PFETs) increases with reduced channel lengths during high driving forces across the source and drain, which is contradictory to the decrease in mobility caused by short-channel effects in amorphous Si thin-film transistors. The longitudinal electric-field (across source and drain) dependence of the FE mobility is believed to create the rise in mobility once the longitudinal electric field exceeds a critical value of 10 5 V/cm . The high longitudinal electric field also modulates the influence of the gate bias upon the FEM in PT PFETs. With increased longitudinal electric field, the correlation between FEM and gate bias is largely enhanced.Keywords
This publication has 16 references indexed in Scilit:
- Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodesIEEE Electron Device Letters, 2001
- Mobility enhancement in conjugated polymer field-effect transistors through chain alignment in a liquid-crystalline phaseApplied Physics Letters, 2000
- Microstructure–mobility correlation in self-organised, conjugated polymer field-effect transistorsSynthetic Metals, 2000
- Integrated, high-mobility polymer field-effect transistors driving polymer light-emitting diodesSynthetic Metals, 1999
- Pentacene organic thin-film transistors for circuit and display applicationsIEEE Transactions on Electron Devices, 1999
- Gate voltage dependent mobility of oligothiophene field-effect transistorsJournal of Applied Physics, 1999
- Integrated Optoelectronic Devices Based on Conjugated PolymersScience, 1998
- Stacked pentacene layer organic thin-film transistors with improved characteristicsIEEE Electron Device Letters, 1997
- Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobilityApplied Physics Letters, 1996
- An analytical model for short-channel organic thin-film transistorsJournal of Applied Physics, 1995