Photo-created defects in a-Si:H as elucidated by ESR, LESR and CPM
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 114, 630-632
- https://doi.org/10.1016/0022-3093(89)90672-8
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Nature of Localized States in Hydrogenated Si–Based Amorphous Semiconductor Films Elucidated from LESR and CPMJapanese Journal of Applied Physics, 1989
- Electronic States for Threefold- and Fivefold-Coordinated Si Atoms in Amorphous SiJapanese Journal of Applied Physics, 1988
- Nature of paramagnetic centers ina-Si anda-Si:HPhysical Review B, 1988
- Recombination mechanisms in amorphous semiconductors deduced from resonance measurementsJournal of Non-Crystalline Solids, 1985
- Luminescence and ESR studies of defects in hydrogenated amorphous siliconSolid State Communications, 1980