Epitaxial Crystallization of Ge on Si Using Evaporation and Recrystallization Techniques
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984
- Single-crystal Ge films on SiO2-coated Si wafers by laterally seeded heteroepitaxyJournal of Applied Physics, 1984
- Single Crystalline Germanium Island on Insulator by Zone Melting RecrystallizationJapanese Journal of Applied Physics, 1983
- Explosive Crystallization in a-Ge and a-Si : A ReviewMRS Proceedings, 1982