Ethanol sensitivity of palladium-gate metal-oxide-semiconductor structures

1 June 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 7 (6), 353-355
https://doi.org/10.1109/EDL.1986.26398

Abstract

Hydrogen-sensitive palladium-gate MOS structures heated above 150°C show sensitivity to ethanol vapor. The effect is probably due to catalytic dehydrogenation of adsorbed ethanol molecules on the surface of the palladium gate.

Keywords

ETHANOL
HYDROGEN
PALLADIUM
ATOMIC LAYER DEPOSITION
VOLTAGE
MOS CAPACITORS
CAPACITANCE
TEMPERATURE SENSORS
PHYSICS
CHEMICAL TECHNOLOGY

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