Picosecond GaAs monolithic optoelectronic sampling circuit
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (6), 567-569
- https://doi.org/10.1109/68.91037
Abstract
An optoelectronic sampling circuit has been fabricated for direct measurement of picosecond optical waveforms. The monolithic device incorporates a GaAs Schottky photodetector and a high-speed sampling circuit gated by a nonlinear transmission line strobe pulse generator. Excited by a 850-nm mode-locked dye laser, a 5.6-ps FWHM impulse response is measured; the authors estimate a deconvolved impulse response of approximately 4.5 ps FWHM.<>Keywords
This publication has 9 references indexed in Scilit:
- Monolithic integrated circuits for mm-wave instrumentationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 275 GHz 3-mask integrated GaAs sampling circuitElectronics Letters, 1990
- Subpicosecond laser timing stabilizationIEEE Journal of Quantum Electronics, 1989
- 105-GHz bandwidth metal-semiconductor-metal photodiodeIEEE Electron Device Letters, 1988
- Generation of 3.5-ps fall-time shock waves on a monolithic GaAs nonlinear transmission lineIEEE Electron Device Letters, 1988
- 110 GHz high-efficiency photodiodes fabricated from indium tin oxide/GaAsElectronics Letters, 1987
- 100 GHz bandwidth planar GaAs Schottky photodiodeElectronics Letters, 1983
- HOLE VELOCITY IN p-GaAsApplied Physics Letters, 1970
- Transit-Time Considerations in p—i—n DiodesJournal of Applied Physics, 1964