Erbium-doped phosphosilicate glass waveguide amplifier fabricated by PECVD

Abstract
An Er-doped waveguide amplifier fabricated by plasma enhanced chemical vapour deposition is described. A maximum net gain of 5 dB and a gain coefficient of 0.67 dB/cm are obtained in a 0.48 wt% Er-doped waveguide pumped at 420 mW at a wavelength of 0.98 μm. The 0 dB gain threshold is 23 mW.