Observation of extremely large quadratic susceptibility at 9.6–10.8μm in electric-field-biased AlGaAs quantum wells
- 27 February 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 62 (9), 1041-1044
- https://doi.org/10.1103/physrevlett.62.1041
Abstract
We have observed an extremely large second-order susceptibility for second-harmonic generation of 9.6–10.8 μm radiation due to intersubband transitions in electric-field-biased GaAs quantum wells. For 92-Å GaAs wells with 309-Å As barriers under a bias of 36 kV/cm, the peak value of the susceptibility was 28 nm/V, 73 times larger than bulk GaAs. The magnitude and sign of the susceptibility depend on the bias field, and are in accord with theoretical predictions.
Keywords
This publication has 15 references indexed in Scilit:
- Electric field control of optical second-harmonic generation in a quantum wellApplied Physics Letters, 1988
- Observation of Stark shifts in quantum well intersubband transitionsApplied Physics Letters, 1987
- Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguidesApplied Physics Letters, 1987
- Analysis of diffraction in periodic liquid crystals: the optics of the chiral smectic C phaseJournal of the Optical Society of America A, 1987
- Optical properties of AlxGa1−x AsJournal of Applied Physics, 1986
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985
- Synthetic nonlinear semiconductorsIEEE Journal of Quantum Electronics, 1983
- Semiconducting and other major properties of gallium arsenideJournal of Applied Physics, 1982