Electron Traps due to Defect-Impurity Complexes Induced by the Deformation of Epitaxial GaAs Grown on Si-Doped Substrate

Abstract

Dependence of deformation induced deep levels on substrate impurities and deformation conditions was studied. Electron traps such as EB4 and EB6 were dominantly induced when undoped VPE GaAs grown on Si-doped substrates was deformed at temperatures higher than 600°C, whereas EL2, HL2(LPE-B) and Cu levels were dominant in deformed VPE layers on Cr-doped substrates. These results indicate that the deformation induced defects easily make complexes with impurities in the substrates, and that the EB4 and EB6 are not simple defects but are complexes with Si impurities.