Synchrotron X-Ray Diffraction Study of Silicon during Pulsed-Laser Annealing

Abstract

Time-resolved x-ray diffraction measurements of lattice strain in silicon during pulsed-laser annealing have been made with nanosecond resolution by using synchrotron radiation. Analyses of the strain in pure and boron-implanted silicon in terms of temperature indicate high temperatures and evidence for near-surface melting, in qualitative agreement with the melting model of laser annealing.