Physical Properties of Several II-V Semiconductors

Abstract

The physical properties of single crystals of the noncubic II-V semiconducting compounds ${\mathrm{Zn}}_3$ ${\mathrm{As}}_2$, Zn${\mathrm{As}}_2$, ZnSb, ${\mathrm{Cd}}_3$ ${\mathrm{As}}_2$, Cd${\mathrm{As}}_2$, and CdSb have been investigated. Energy gaps in these materials vary from approximately 0.13 to 1.0 ev. Mobilities at 297°K range from 10 ${\mathrm{cm}}^2$/volt sec to 15 000 ${\mathrm{cm}}^2$/volt sec and increase at low temperature. Resistivity and mobility anisotropy have been investigated in detail for Cd${\mathrm{As}}_2$. Except for the ${A_3}^{\mathrm{II}}{B_2}^{\mathrm{V}}$ compounds, high optical transmission has been observed from the intrinsic edge to approximately 30 microns.