Redistribution of dopants in ion-implanted silicon by pulsed-laser annealing

Abstract

The redistribution of B, P, As, and Sb implanted into single‐crystal silicon and subsequently laser annealed with a Q‐switched ruby laser has been studied by secondary‐ion mass spectrometry and ion backscattering. Substantial alteration of the as‐implanted profiles occurs, which is pulse‐energy‐density dependent. The altered profiles are in good agreement with theoretical calculations to be presented in a subsequent paper which show that redistribution occurs as a result of diffusion in the molten state.