Regrowth kinetics of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystals
- 31 March 1977
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 21 (11), 1019-1021
- https://doi.org/10.1016/0038-1098(77)90009-6
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Regrowth behavior of ion-implanted amorphous layers on 〈111〉 siliconApplied Physics Letters, 1976
- Annealing and crystallization of amorphous germanium thin filmsThin Solid Films, 1976
- Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal SiPhysics Letters A, 1975
- Amorphous germanium I. A model for the structural and optical propertiesAdvances in Physics, 1973
- Crystallization processes in a-Ge thin filmsJournal of Non-Crystalline Solids, 1972