Reduced incorporation of unintentional impurities and intrinsic defects in ZnSe and ZnS grown by MOVPE
- 1 February 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 117 (1-4), 336-340
- https://doi.org/10.1016/0022-0248(92)90771-a
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- ZnS/ZnSe/GaAs heterostructures grown by metal-organic vapour phase epitaxyMaterials Science and Engineering B, 1991
- Correlation between radiative transitions and structural defects in zinc selenide epitaxial layersApplied Physics Letters, 1990
- Influence of stacking faults in polymorphic ZnS on thecrystal-field states ofPhysical Review B, 1990
- Spectroscopy of bound excitons in cubic ZnS at moderate to high excitation densitiesPhysical Review B, 1989
- Detection and control of impurity incorporation in MBE-grown ZnSeJournal of Crystal Growth, 1988
- Electrical and optical properties of donor doped ZnS films grown by low-pressure MOCVDJournal of Crystal Growth, 1988
- GaAlAs laser diodes with metalorganic chemical vapor deposition grown ZnSe layer for injection blocking and optical confinementApplied Physics Letters, 1987
- Growth kinetics in the MOVPE of ZnSe on GaAs using zinc and selenium alkylsJournal of Crystal Growth, 1986
- The role of impurities in refined ZnSe and other II–VI semiconductorsJournal of Crystal Growth, 1982
- Fluorescence of Cubic ZnS: Cl CrystalsPhysical Review B, 1962