Hexagonal WSi2 in cosputtered (tungsten and silicon) mixture
- 1 December 1981
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (12), 7450-7452
- https://doi.org/10.1063/1.328741
Abstract
Hexagonal WSi2 was found to form from nearly amorphous cosputtered (tungsten and silicon) mixtures depostied on oxidized silicon. This form of WSi2 was detected in films sintered at temperatures in the range 400–600 °C. At temperatures of 700 °C or above, only tetragonal WSi2 formed. The hexagonal‐to‐tetragonal transformation temperature was found to be ∼550 °C. At 600 °C the transformation appears to follow a square root of time dependence.Keywords
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