Dielectric properties and growth kinetics of oxide film of molybdenum silicide on have been investigated. The oxide of is composed of , and the oxidation rate of is described by the same general relationship as of the crystalline silicon. The molybdenum in is partly vaporized through the oxide and is partly piled up at the interface during oxidation. The ratio of thickness to corresponding thickness of oxide produced from decreases from 0.48 to 0.3 with increasing oxide thickness due to increasing piled‐up molybdenum. The dielectric constant and the dielectric breakdown strength of are very close to those of n+‐poly‐Si oxide. The oxide shows the selfhealing breakdown, more frequently than the n+‐poly‐Si oxide, which is due to the interface roughness induced by the pile‐up of molybdenum. The dielectric breakdown strength is improved at higher oxidation temperatures.