Islanding and Surface Diffusion in Semiconductor Heteroepitaxy: Ge on Si
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)Surface Science, 1985
- Observation of a (5 × 5) leed pattern from GexSi1−x(111) alloysSurface Science, 1984
- Effect of surface reconstruction on the adsorption of Ge on clean Si(111)Solid State Communications, 1983
- The diffusion of germanium in siliconJournal of Applied Physics, 1973