Hot electrons in modulation-doped GaAs-AlGaAs heterostructures
- 1 February 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (3), 322-324
- https://doi.org/10.1063/1.94739
Abstract
We have investigated electric field heating of high mobility electrons in modulation-doped GaAs-AlGaAs heterostructures by simultaneous measurement of luminescence and mobility. We find that hot electrons have a Fermi-Dirac distribution function for fields up to 750 V/cm and that the high field mobility of electrons can be understood in terms of field-induced electron heating and the temperature dependence of low field mobility.Keywords
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