Seebeck and piezoresistance effects in amorphous-microcrystalline mixed-phase silicon films and applications to power sensors and strain gauges
- 1 February 1984
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 112 (1), 7-16
- https://doi.org/10.1016/0040-6090(84)90497-8
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Thermoelectric power, hall effect and density-of-states measurements on glow-discharge microcrystalline siliconPhilosophical Magazine Part B, 1982
- Critical volume fraction of crystallinity for conductivity percolation in phosphorus-doped Si:F:H alloysApplied Physics Letters, 1982
- Boron Doping of Hydrogenated Silicon Thin FilmsJapanese Journal of Applied Physics, 1981
- Electrical and optical properties of amorphous Si:F:H alloysPhilosophical Magazine Part B, 1979
- Properties of heavily doped GDSi with low resistivityJournal of Non-Crystalline Solids, 1979
- Amorphous-silicon field-effect device and possible applicationElectronics Letters, 1979
- Thermoelectric power in phosphorous doped amorphous siliconPhilosophical Magazine, 1977
- Hall effect and impurity conduction in substitutionally doped amorphous siliconPhilosophical Magazine, 1977
- Amorphous silicon solar cellApplied Physics Letters, 1976
- Semiconducting Stress Transducers Utilizing the Transverse and Shear Piezoresistance EffectsJournal of Applied Physics, 1961