Silicon doping of GaAs and AlxGa1−xAs using disilane in metalorganic chemical vapor deposition
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1), 48-53
- https://doi.org/10.1016/0022-0248(84)90396-8
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Temperature dependence of the growth rate of silicon prepared through chemical vapor deposition from silaneApplied Physics Letters, 1982
- A new technique for gettering oxygen and moisture from gases used in semiconductor processingApplied Physics Letters, 1982
- Etude du dopage de l'arséniure de gallium par la technique d'épitaxie en phase vapeur aux organométalliquesRevue de Physique Appliquée, 1982
- A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxyJournal of Crystal Growth, 1981
- Te doping of vapor phase epitaxial GaAsJournal of Crystal Growth, 1980
- Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine methodJournal of Crystal Growth, 1979
- A New Method for Growing GaAs Epilayers by Low Pressure OrganometallicsJournal of the Electrochemical Society, 1979
- Trapping characteristics and a donor-complex () model for the persistent-photoconductivity trapping center in Te-dopedPhysical Review B, 1979
- The Kinetics of Silicon Deposition on Silicon by Pyrolysis of SilaneJournal of the Electrochemical Society, 1974
- The pyrolysis of disilane and rate constants of silene insertion reactionsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1971