Comparison of electrical profiles from hot and cold implantations of zinc ions into GaAs
- 1 January 1978
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 14 (1), 22-23
- https://doi.org/10.1049/el:19780016
Abstract
Hole concentration and mobility profiles have been measured as a function of dose for 450 keV zinc ions implanted into GaAs. For doses above 1014 ions/cm2 implanted at 200°C very broad profiles were obtained suggesting that significant indiffusion has occurred. However, much narrower profiles were obtained after implanting at room temperature. Peak hole concentrations were in the range 1018–1019 holes/cm3.Keywords
This publication has 1 reference indexed in Scilit:
- Electrical profiles from zinc implanted GaAsElectronics Letters, 1978