Chemical-equilibrium model of impurity incorporation inn-typea-Si:H
- 21 August 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 63 (8), 880-883
- https://doi.org/10.1103/physrevlett.63.880
Abstract
A chemical-equilibrium model for plasma-enhanced chemical vapor deposition of a-Si:H is developed to interpret the irregular incorporation of As and P. The model shows that the irregularity occurs only for nondoping impurities; their distribution coefficient is inversely proportional to the rf plasma power, which leads to the large As concentration enhancement observed under low-power growth conditions. A configuration-energy diagram is proposed to account for this enhancement based on the preferential formation of stable, inactive As in a configuration other than the usual interconverting three- and fourfold-coordinated sites.Keywords
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