Resistive properties of indium and indium-gallium contacts to CdS
- 30 November 1968
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 11 (11), 1015-1020
- https://doi.org/10.1016/0038-1101(68)90125-1
Abstract
No abstract availableKeywords
This publication has 30 references indexed in Scilit:
- Metal-semiconductor surface barriersSolid-State Electronics, 1966
- Correlation of Metal-Semiconductor Barrier Height and Metal Work Function; Effects of Surface StatesJournal of Applied Physics, 1966
- CONTACT BARRIERS ON INSULATING CdSApplied Physics Letters, 1966
- SURFACE STATES ON SEMICONDUCTOR CRYSTALS; BARRIERS ON THE Cd(Se:S) SYSTEMApplied Physics Letters, 1965
- Fermi Level Position at Metal-Semiconductor InterfacesPhysical Review B, 1964
- Evaporated Metallic Contacts to Conducting Cadmium Sulfide Single CrystalsJournal of Applied Physics, 1964
- Barrier Height Studies on Metal-Semiconductor SystemsJournal of Applied Physics, 1963
- Pressure induced phase transitions in some II–VI compoundsJournal of Physics and Chemistry of Solids, 1962
- Ultrasonic Amplification in CdSPhysical Review Letters, 1961
- Properties of Ohmic Contacts to Cadmium Sulfide Single CrystalsPhysical Review B, 1955