Growth by CVT and characterization of Hg1ȡCd Te Layers
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 65 (1-3), 474-478
- https://doi.org/10.1016/0022-0248(83)90089-1
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Chemical Vapor Transport and Crystal Growth of the Hg0.8Cd0.2Te System, Crystal Morphology and HomogeneityZeitschrift für anorganische und allgemeine Chemie, 1982
- Optimization of Isothermal Growth of HgCdTe LayersJournal of the Electrochemical Society, 1982
- The growth by MOVPE and characterisation of CdxHg1−xTeJournal of Crystal Growth, 1981
- Partial Pressures over HgTe ‐ CdTe Solid Solutions: II . Results forJournal of the Electrochemical Society, 1981
- Partial Pressures over HgTe ‐ CdTe Solid Solutions: I . Calibration Experiments and Results forJournal of the Electrochemical Society, 1981
- Vapor phase growth of Hg1−xCdx Te epitaxial layersJournal of Electronic Materials, 1978
- Hg-Cd-Te phase diagram determination by high pressure refluxJournal of Electronic Materials, 1976
- Vacuum Deposition of Hg0.8Cd0.2TeJournal of Applied Physics, 1971
- Phase diagram of Hg(1−x)CdxTe∗Infrared Physics, 1968
- Partial pressures of Hg(g) and Te2(g) in Hg-Te system from optical densitiesJournal of Physics and Chemistry of Solids, 1965