Two-dimensional electron gas of very high mobility in planar doped heterostructures
- 1 January 1987
- journal article
- Published by EDP Sciences in Journal de Physique
- Vol. 48 (12), 2049-2052
- https://doi.org/10.1051/jphys:0198700480120204900
Abstract
We demonstrate how it is possible to optimize the reduction of remote ionized impurity scattering in modulation doped heterostructures. This can be obtained by a novel implementation of the doping in the barrier using two planar doped layers separated by a large spacer. We have verified this prediction in GaAs/GaAlAs heterojunctions and obtained in preliminary studies very high mobilities reaching a peak value of 3.7 × 106cm2V-1s -1 at a sheet electron density of 1.8 x 1011 cm-2Keywords
This publication has 8 references indexed in Scilit:
- GaAs structures with electron mobility of 5×106 cm2/V sApplied Physics Letters, 1987
- Two-dimensional electron gas structures with mobilities in excess of 3×106 cm2 V−1 s−1Journal of Applied Physics, 1987
- Delta- (°-) doping in MBE-grown GaAs: Concept and device applicationJournal of Crystal Growth, 1987
- Scattering mechanisms in (Al, Ga)As/GaAs 2DEG structuresSuperlattices and Microstructures, 1986
- Doping considerations for heterojunctionsApplied Physics Letters, 1983
- Two-Dimensional Magnetotransport in the Extreme Quantum LimitPhysical Review Letters, 1982
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAsJournal of Applied Physics, 1980