Wavelength uniformity of 1.3 μm GaInAsP/InP distributed Bragg reflector lasers with hybrid beam/vapour epitaxial growth

Abstract

We report 1.3 μm distributed Bragg reflector (DBR) lasers with a hybrid growth employing base wafers grown by chemical beam epitaxy (CBE), and Fe-doped InP lateral current blocking grown by metal-organic chemical vapour deposition (MOCVD). These lasers display exceptional wavelength uniformity (σ ∼ 27 Å) across the wafer, and suggest that DBR lasers and vapour/beam growth techniques may be suitable for advanced WDM applications.