Role of the semiconductor/insulator interface in the characteristics of π-conjugated-oligomer-based thin-film transistors
- 1 September 1992
- journal article
- Published by Elsevier in Synthetic Metals
- Vol. 51 (1-3), 419-424
- https://doi.org/10.1016/0379-6779(92)90297-v
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- An analytical model for organic-based thin-film transistorsJournal of Applied Physics, 1991
- Field-effect transistors using alkyl substituted oligothiophenesApplied Physics Letters, 1991
- An all‐organic "soft" thin film transistor with very high carrier mobilityAdvanced Materials, 1990
- All-organic thin-film transistors made of alpha-sexithienyl semiconducting and various polymeric insulating layersApplied Physics Letters, 1990
- The oligothiophene-based field-effect transistor: How it works and how to improve itJournal of Applied Physics, 1990
- Evidence for a linear low-voltage space-charge-limited current in organic thin films. Film thickness and temperature dependence in alpha-conjugated sexithienylJournal de Physique, 1990
- A field-effect transistor based on conjugated alpha-sexithienylSolid State Communications, 1989